What is GaN?
Gallium Nitride also known as GaN is a material that has been used in the production of semiconductor power devices, RF components and light emitting diodes (LEDs). GaN has the ability to provide innovative solutions for silicon semiconductors in power conversion.
What makes GaN different?
GaN is paving the way for innovative electronic technology as it has the functionality to conduct electrons more than 1000 times more efficiently than silicon.
As transistor and IC performance increases through adoption of GaN materials, power design engineers have been starting to capitalize on its numerous potential benefits, including:
- Low resistance giving lower conductance losses
- Increased device transition speeds, yielding fewer switching losses
- Smaller devices freeing up room on the circuit board
- Reduced capacitance = less losses when charging and discharging devices
- More efficient overall
- Can survive at higher temperatures than silicon
CPE PSUs and GaN
NetBit is always on the lookout for the latest technologies. Gallium Nitride is poised to be adopted on an ever-increasing scale in the PSU CPE market due to the potential ability to decrease the power supply size whilst increasing efficiency.
The GaN market is (perhaps optimistically!) projected to show growth of up to 55% CAGR until 2023, driven primarily by the power supply segment.
GaN looks to hold a very promising future but has not been implemented on a large scale globally within CPE at present, due to the relatively high price point compared to its silicon-based alternatives. However, forecasts show that this technology will experience significant growth in 2020 and it’s only a matter of time before the price point reaches the level where the breakthrough is inevitable.
NetBit continues to monitor the technology seeking the optimum window of opportunity where the application requirements merit GaN deployment.
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